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TrenchStop series
IKP06N60T p
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
* * * *
* * * * * *
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behaviour Low EMI Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC;Tc=100C VCE(sat),Tj=25C 6A 1.5V Tj,max 175C Marking K06T60 Package PG-TO-220-3-1
G
E
Type IKP06N60T
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 175C Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s
2)
Symbol VCE IC
Value 600 12 6 18 18
Unit V A
ICpul s IF
12 6 18 20 5 88 -40...+175 -55...+175 260 V s W C
IFpul s VGE tSC Ptot Tj Tstg
VGE = 15V, VCC 400V, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 May 06
Power Semiconductors
TrenchStop series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJC RthJCD RthJA Symbol Conditions
IKP06N60T p
Max. Value 1.7 2.6 62 Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0. 25m A VCE(sat) V G E = 15 V , I C = 6 A T j =2 5 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 6 A T j =2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 18m A , VCE=VGE V C E = 60 0 V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j = 25 C 368 28 11 42 7 55 nC nH A pF IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A 3.6 none 40 700 100 nA S A 4.1 1.6 1.6 4.6 2.05 5.7 1.5 1.8 2.05 600 V Symbol Conditions Value min. typ. max. Unit
LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IC(SC)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.2 May 06
Power Semiconductors
TrenchStop series
IKP06N60T p
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 6 A, d i F / d t =5 5 0 A/ s 123 190 5.3 450 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 23 , 2) L =6 0 nH , 2) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 9 6 130 58 0.09 0.11 0.2 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =1 7 5 C V R = 4 00 V , I F = 6 A, d i F / d t =5 5 0 A/ s 180 500 7.6 285 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C, V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 2 3 1) L =6 0 nH , 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 9 8 165 84 0.14 0.18 0.335 mJ ns Symbol Conditions Value min. typ. max. Unit
2) 1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.2 May 06
Power Semiconductors
TrenchStop series
IKP06N60T p
tp=1s 5s 10s
18A 15A T C =80C 12A 9A 6A 3A 0A 100Hz T C =110C
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
1A
50s
Ic
Ic
1kHz 10kH z 100kHz
500s 5ms DC 0,1A 1V 10V 100V 1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
80W
15A
60W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
10A
40W
5A
20W
0W 25C
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
15A V G E =20V 12A 15V 13V 9A 11V 9V 6A 7V
15A V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
12A
15V 13V
9A
11V 9V
6A
7V
3A
3A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC =12A 2,5V
1 5A
IC, COLLECTOR CURRENT
1 2A
2,0V
IC =6A
9A
1,5V
6A T J =1 75 C 25 C 0A
1,0V
IC =3A
3A
0,5V
0V
2V
4V
6V
8V
1 0V
0,0V -50C
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
td(off)
t d(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
100ns tf td(on) tr
10ns
t d(on)
10ns
tr 1ns 0A 3A 6A 9A 12A 15A
1ns
10
30
50
70
90
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
100ns td(off) tf
6V 5V 4V 3V m in. 2V 1V 0V -50C m ax.
t, SWITCHING TIMES
typ.
10ns
t d(on)
tr
1ns
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA)
Power Semiconductors
6
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
*) E on and E ts include losses due to diode recovery E ts*
*) E on and E ts include losses 0,6 mJ due to diode recovery E ts *
E, SWITCHING ENERGY LOSSES
0,5 mJ 0,4 mJ 0,3 mJ 0,2 mJ 0,1 mJ 0,0 mJ 0A
E, SWITCHING ENERGY LOSSES
0,4 mJ
0,3 mJ
E on*
E off E on*
0,2 mJ
E off
0,1 mJ
2A
4A
6A
8A
10A
0,0 mJ
10
30
55
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
*) E on and E ts include losses due to diode recovery 0,4mJ
0,5m J
*) E on and E ts include losses due to diode recovery E ts * 0,4m J
E, SWITCHING ENERGY LOSSES
0,3mJ E ts * 0,2mJ E off 0,1mJ E on* 0,0mJ 50C 100C 150C
E, SWITCHING ENERGY LOSSES
0,3m J
E off
0,2m J E on * 0,1m J
0,0m J 200V
300V
400V
500V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
1nF
VGE, GATE-EMITTER VOLTAGE
15V
C iss
120V 10V 48 0V
c, CAPACITANCE
100pF
C oss C rss 10pF
5V
0V 0nC
10 nC
20n C
30nC
40nC
50nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
80A
tSC, SHORT CIRCUIT WITHSTAND TIME
10s 8s 6s 4s 2s 0s 10V
60A
40A
20A
0A 12V
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W 0.2 0.1 0.05 10 K/W 0.02 0.01
C 1 = 1 /R 1 C 2 = 2 /R 2
-1
0
0.2 0.1 10 K/W 0.02 0.01
-1
0.05
R,(K/W) 0.3837 0.4533 0.5877 0.2483
R1
, (s) 5.047*10-2 4.758*10-3 4.965*10-4 4.717*10-5
R2
R,(K/W) 0.2520 0.4578 1.054 0.7822
R1
, (s) 4.849*10-2 1.014*10-2 1.309*10-3 1.343*10-4
R2
C 1 = 1 /R 1
C 2 = 2 /R 2
single pulse
single pulse
10 K/W 1s
-2
10s 100s
1ms
10m s 100m s
10 K/W 1s
-2
10s 100s
1ms
10m s 100m s
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
250ns
0,5C
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
T J=175C
0,4C
200ns
150ns
TJ=175C
0,3C
100ns
0,2C
TJ=25C
50ns
T J=25C
0,1C
0ns 200A/s
400A/s
600A/s
800A/s
0,0C 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=400V, IF=6 A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT
8A
-500A/s
T J=25C
-400A/s
6A
T J =25C
-300A/s
4A
T J=175C
-200A/s
2A
-100A/s
0A
200A/s
400A/s
600A/s
800A/s
0A/s 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
10A
2,0V I F =12A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
8A
6A 1,5V 3A 1,0V
6A
4A T J =175C 2A 25C
0,5V
0A
0,0V
0V
1V
2V
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
dimensions symbol
TO-220AB PG-TO220-3-1
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
Power Semiconductors
11
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF.
Power Semiconductors
12
Rev. 2.2 May 06
TrenchStop series
IKP06N60T p
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/8/06. All Rights Reserved. Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.2 May 06

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